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| inchange semiconductor isc product specification isc silicon pnp power transistors 2SB558 description collector-emitter breakdown voltage- : v (br)ceo = -100v(min) high power dissipation- : p c = 60w(max)@t c =25 complement to type 2sd428 applications designed for power amplifier applications. recommended for 40w high-fidelity audio frequency amplifier output stage. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage -100 v v ceo collector-emitter voltage -100 v v ebo emitter-base voltage -5 v i c collector current-continuous -7 a i e emitter current-continuous 7 a p c collector power dissipation @t c =25 60 w t j junction temperature 150 t stg storage temperature -65~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp power transistors 2SB558 electrical characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = -0.1a; i b = 0 b -100 v v (br)ebo emitter-base breakdown voltage i e = -10ma; i c = 0 -5 v v ce (sat) collector-emitter saturation voltage i c = -5a; i b = -0.5a b -2.5 v v be (on) base-emitter on voltage i c = -5a; v ce = -5v -2.0 v i cbo collector cutoff current v cb = -50v; i e = 0 -0.1 ma i ebo emitter cutoff current v eb = -5v; i c = 0 -0.1 ma h fe-1 dc current gain i c = -1a; v ce = -5v 40 140 h fe-2 dc current gain i c = -5a; v ce = -5v 15 c ob output capacitance i e = 0; v cb = -10v; f= 1mhz 220 pf f t current-gain?bandwidth product i c = -1a; v ce = -5v 7 mhz ? h fe- 1 classifications r o 40-80 70-140 isc website www.iscsemi.cn |
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